Light-induced modification of the Schottky barrier height in graphene/Si based near-infrared photodiodes
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CitationMehmet Fidan, G Dönmez, A. Yanilmaz, Özhan Ünverdi, and Cem Çelebi , "Light-induced modification of the Schottky barrier height in graphene/Si based near-infrared photodiodes", Infrared Physics and Technology 123, 104165 (2022).
The impact of light on the Schottky barrier height (SBH) in p-type graphene/n-type Si (p-Gr/n-Si) based near-infrared photodiodes is investigated. Hall effect and optoelectronic transport measurements carried out under illumination of 905 nm wavelength light showed that zero-bias SBH in such photodiodes can be effectively tuned in a range between 0.7 and 0.9 eV consistent with the variation in their open-circuit voltage. Shockley-Read-Hall model, which considers the charge recombination through mid-gap and interface states at the p-Gr/n-Si heterojunction, is used to explain the experimentally observed nonlinear dependence of SBH on the incident light. Light induced tunability of SBH at the graphene/semiconductor heterojunction is of great importance especially for the development of new generation optically driven devices in which graphene acts as a functioning element. © 2022 Elsevier B.V.